Cypress Perform nvSRAM Manual do Utilizador

Consulte online ou descarregue Manual do Utilizador para Hardware Cypress Perform nvSRAM. Cypress Perform nvSRAM User Manual Manual do Utilizador

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PRELIMINARY
CY14B102L, CY14B102N
2 Mbit (256K x 8/128K x 16) nvSRAM
Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document #: 001-45754 Rev. *B Revised November 10, 2008
Features
20 ns, 25 ns, and 45 ns Access Times
Internally organized as 256K x 8 (CY14B102L) or 128K x 16
(CY14B102N)
Hands off Automatic STORE on power down with only a small
Capacitor
STORE to QuantumTrap
®
nonvolatile elements initiated by
software, device pin, or AutoStore
®
on power down
RECALL to SRAM initiated by software or power up
Infinite Read, Write, and Recall Cycles
200,000 STORE cycles to QuantumTrap
20 year data retention
Single 3V +20% to -10% operation
Commercial, Industrial and Automotive Temperatures
48-ball FBGA and 44/54-pin TSOP - II packages
Pb-free and RoHS compliance
Functional Description
The Cypress CY14B102L/CY14B102N is a fast static RAM, with
a nonvolatile element in each memory cell. The memory is
organized as 256K bytes of 8 bits each or 128K words of 16 bits
each. The embedded nonvolatile elements incorporate
QuantumTrap technology, producing the world’s most reliable
nonvolatile memory. The SRAM provides infinite read and write
cycles, while independent nonvolatile data resides in the highly
reliable QuantumTrap cell. Data transfers from the SRAM to the
nonvolatile elements (the STORE operation) takes place
automatically at power down. On power up, data is restored to
the SRAM (the RECALL operation) from the nonvolatile memory.
Both the STORE and RECALL operations are also available
under software control.
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Logic Block Diagram
[1, 2, 3]
Note
1. Address A
0
- A
17
for x8 configuration and Address A
0
- A
16
for x16 configuration.
2. Data DQ
0
- DQ
7
for x8 configuration and Data DQ
0
- DQ
15
for x16 configuration.
3. BHE
and BLE are applicable for x16 configuration only.
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Resumo do Conteúdo

Página 1 - CY14B102L, CY14B102N

PRELIMINARYCY14B102L, CY14B102N2 Mbit (256K x 8/128K x 16) nvSRAMCypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 40

Página 2

PRELIMINARYCY14B102L, CY14B102NDocument #: 001-45754 Rev. *B Page 10 of 24Figure 7. SRAM Read Cycle #2: CE and OE Controlled[3, 15, 19]Figure 8. SRA

Página 3

PRELIMINARYCY14B102L, CY14B102NDocument #: 001-45754 Rev. *B Page 11 of 24Figure 9. SRAM Write Cycle #2: CE Controlled[3, 18, 19, 20]Figure 10. SRAM

Página 4

PRELIMINARYCY14B102L, CY14B102NDocument #: 001-45754 Rev. *B Page 12 of 24AutoStore/Power Up RECALLParameters Description20 ns 25 ns 45 nsUnitMin Max

Página 5

PRELIMINARYCY14B102L, CY14B102NDocument #: 001-45754 Rev. *B Page 13 of 24Software Controlled STORE/RECALL CycleIn the following table, the software c

Página 6

PRELIMINARYCY14B102L, CY14B102NDocument #: 001-45754 Rev. *B Page 14 of 24Hardware STORE CycleParameters Description20 ns 25 ns 45 nsUnitMin Max Min M

Página 7

PRELIMINARYCY14B102L, CY14B102NDocument #: 001-45754 Rev. *B Page 15 of 24Truth Table For SRAM OperationsHSB should remain HIGH for SRAM Operations.Fo

Página 8

PRELIMINARYCY14B102L, CY14B102NDocument #: 001-45754 Rev. *B Page 16 of 24Ordering InformationSpeed(ns)Ordering CodePackageDiagramPackage TypeOperatin

Página 9

PRELIMINARYCY14B102L, CY14B102NDocument #: 001-45754 Rev. *B Page 17 of 2425 CY14B102L-ZS25XCT 51-85087 44-pin TSOP II CommercialCY14B102L-ZS25XIT 51-

Página 10

PRELIMINARYCY14B102L, CY14B102NDocument #: 001-45754 Rev. *B Page 18 of 2445 CY14B102L-ZS45XCT 51-85087 44-pin TSOP II CommercialCY14B102L-ZS45XIT 51-

Página 11

PRELIMINARYCY14B102L, CY14B102NDocument #: 001-45754 Rev. *B Page 19 of 24Part Numbering NomenclatureOption:T - Tape & ReelBlank - Std.Speed:20 -

Página 12

PRELIMINARYCY14B102L, CY14B102NDocument #: 001-45754 Rev. *B Page 2 of 24Pinouts Figure 1. Pin Diagram - 48 FBGA Figure 2. Pin Diagram - 44 Pin TSOP

Página 13

PRELIMINARYCY14B102L, CY14B102NDocument #: 001-45754 Rev. *B Page 20 of 24Package Diagrams Figure 16. 44-Pin TSOP II (51-85087)MAXMIN.DIMENSION IN MM

Página 14

PRELIMINARYCY14B102L, CY14B102NDocument #: 001-45754 Rev. *B Page 21 of 24Figure 17. 48-Ball FBGA - 6 mm x 10 mm x 1.2 mm (51-85128)Package Diagrams

Página 15 - For x16 Configuration

PRELIMINARYCY14B102L, CY14B102NDocument #: 001-45754 Rev. *B Page 22 of 24Figure 18. 54-Pin TSOP II (51-85160)Package Diagrams (continued)51-85160-*

Página 16

PRELIMINARYCY14B102L, CY14B102NDocument #: 001-45754 Rev. *B Page 23 of 24Document History Page Document Title: CY14B102L/CY14B102N 2 Mbit (256K x 8/1

Página 17

Document #: 001-45754 Rev. *B Revised November 10, 2008 Page 24 of 24AutoStore and QuantumTrap are registered trademarks of Simtek Corporation. All pr

Página 18

PRELIMINARYCY14B102L, CY14B102NDocument #: 001-45754 Rev. *B Page 3 of 24Figure 3. Pin Diagram - 54 Pin TSOP II (x16)Pin DefinitionsPin Name IO Type

Página 19 - C - Commercial (0 to 70°C)

PRELIMINARYCY14B102L, CY14B102NDocument #: 001-45754 Rev. *B Page 4 of 24Device OperationThe CY14B102L/CY14B102N nvSRAM is made up of twofunctional co

Página 20

PRELIMINARYCY14B102L, CY14B102NDocument #: 001-45754 Rev. *B Page 5 of 24completion of the STORE operation, theCY14B102L/CY14B102N remains disabled un

Página 21

PRELIMINARYCY14B102L, CY14B102NDocument #: 001-45754 Rev. *B Page 6 of 24Preventing AutoStoreThe AutoStore function is disabled by initiating an AutoS

Página 22

PRELIMINARYCY14B102L, CY14B102NDocument #: 001-45754 Rev. *B Page 7 of 24Maximum RatingsExceeding maximum ratings may impair the useful life of thedev

Página 23

PRELIMINARYCY14B102L, CY14B102NDocument #: 001-45754 Rev. *B Page 8 of 24AC Test ConditionsInput Pulse Levels....

Página 24 - PSoC Solutions

PRELIMINARYCY14B102L, CY14B102NDocument #: 001-45754 Rev. *B Page 9 of 24AC Switching Characteristics ParametersDescription20 ns 25 ns 45 nsUnitCypres

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