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CY7C1364C
9-Mbit
(
256K x 32
)
Pi
p
elined S
y
nc SRAM
Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document #: 38-05689 Rev. *E Revised September 14, 2006
Features
Registered inputs and outputs for pipelined operation
256K × 32 common I/O architecture
3.3V core power supply (V
DD
)
2.5V/3.3V I/O power supply (V
DDQ
)
Fast clock-to-output times
2.8 ns (for 250-MHz device)
Provide high-performance 3-1-1-1 access rate
User-selectable burst counter supporting Intel
®
Pentium
®
interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self-timed writes
Asynchronous output enable
Available in JEDEC-standard lead-free 100-Pin TQFP
package
TQFP Available with 3-Chip Enable and 2-Chip Enable
“ZZ” Sleep Mode Option
Functional Description
[1]
The CY7C1364C SRAM integrates 256K x 32 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE
1
), depth-expansion Chip Enables (CE
2
and CE
3
[2]
), Burst
Control inputs (ADSC
, ADSP, and ADV), Write Enables
(BW
[A:D]
, and BWE), and Global Write (GW). Asynchronous
inputs include the Output Enable (OE
) and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP
) or
Address Strobe Controller (ADSC
) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV
).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to four bytes wide as
controlled by the Byte Write control inputs. GW
when active
LOW
causes all bytes to be written.
The CY7C1364C operates from a +3.3V core power supply
while all outputs may operate with either a +2.5 or +3.3V
supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
Notes:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
2. CE
3
is not available on 2 Chip Enable TQFP package.
Logic Block Diagram-CY7C1364C (256K x 32)
ADDRESS
REGISTER
ADV
CLK
BURST
COUNTER
AND
LOGIC
CLR
Q1
Q0
ADSP
ADSC
MODE
BWE
GW
CE
1
CE
2
CE
3
OE
ENABLE
REGISTER
OUTPUT
REGISTERS
SENSE
AMPS
OUTPUT
BUFFERS
E
PIPELINED
ENABLE
INPUT
REGISTERS
A
0, A1, A
BWB
BWC
BWD
BWA
MEMORY
ARRAY
DQ
s
SLEEP
CONTROL
ZZ
A
[1:0]
2
DQ
A
BYTE
WRITE REGISTER
DQ
B
BYTE
WRITE REGISTER
DQ
C
BYTE
WRITE REGISTER
DQ
D
BYTE
WRITE REGISTER
DQ
A
BYTE
WRITE DRIVER
DQ
B
BYTE
WRITE DRIVER
DQ
C
BYTE
WRITE DRIVER
DQ
D
BYTE
WRITE DRIVER
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Página 1 - CY7C1364C

CY7C1364C9-Mbit (256K x 32) Pipelined Sync SRAMCypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600Documen

Página 2

CY7C1364CDocument #: 38-05689 Rev. *E Page 10 of 18Capacitance[11]Parameter Description Test Conditions100 TQFP Max. UnitCIN Input Capacitance TA = 2

Página 3

CY7C1364CDocument #: 38-05689 Rev. *E Page 11 of 18Switching Characteristics Over the Operating Range[12,13]Parameter Description–250 –200 –166 Uni

Página 4

CY7C1364CDocument #: 38-05689 Rev. *E Page 12 of 18Switching Waveforms Read Cycle Timing[18]Note: 18. On this diagram, when CE is LOW, CE1 is LOW, CE

Página 5

CY7C1364CDocument #: 38-05689 Rev. *E Page 13 of 18Write Cycle Timing[18,19]Note: 19.Full width Write can be initiated by either GW LOW; or by GW HIG

Página 6

CY7C1364CDocument #: 38-05689 Rev. *E Page 14 of 18Read/Write Cycle Timing[18,20, 21]Notes: 20. The data bus (Q) remains in High-Z following a Write

Página 7

CY7C1364CDocument #: 38-05689 Rev. *E Page 15 of 18ZZ Mode Timing[22, 23]Notes: 22. Device must be deselected when entering ZZ mode. See Cycle Descri

Página 8

CY7C1364CDocument #: 38-05689 Rev. *E Page 16 of 18Ordering InformationNot all of the speed, package and temperature ranges are available. Please con

Página 9

CY7C1364CDocument #: 38-05689 Rev. *E Page 17 of 18© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change

Página 10

CY7C1364CDocument #: 38-05689 Rev. *E Page 18 of 18Document History PageDocument Title: CY7C1364C 9-Mbit (256K x 32) Pipelined Sync SRAMDocument Numb

Página 11

CY7C1364CDocument #: 38-05689 Rev. *E Page 2 of 18Selection Guide250 MHz 200 MHz 166 MHz UnitMaximum Access Time 2.8 3.0 3.5 nsMaximum Operating Curr

Página 12

CY7C1364CDocument #: 38-05689 Rev. *E Page 3 of 18Pin Configuration (continued)AAAAA1A0NCNCVSSVDDNCAAAAAAAANCDQBDQBVDDQVSSQDQBDQBDQBDQBVSSQVDDQDQBDQB

Página 13

CY7C1364CDocument #: 38-05689 Rev. *E Page 4 of 18Pin Definitions Name TQFP I/O DescriptionA0, A1, A 37, 36, 32, 33, 34, 35, 43, 44, 45, 46, 47, 48,

Página 14

CY7C1364CDocument #: 38-05689 Rev. *E Page 5 of 18Functional OverviewAll synchronous inputs pass through input registers controlledby the rising edge

Página 15

CY7C1364CDocument #: 38-05689 Rev. *E Page 6 of 18Burst SequencesThe CY7C1364C provides a two-bit wraparound counter, fedby A[1:0], that implements e

Página 16

CY7C1364CDocument #: 38-05689 Rev. *E Page 7 of 18Truth Table[3, 4, 5, 6, 7, 8]Next CycleAddress Used ZZ CE3CE2CE1ADSP ADSC ADV OE DQ WriteUnselected

Página 17

CY7C1364CDocument #: 38-05689 Rev. *E Page 8 of 18Truth Table for Read/Write[3, 4]Function GW BWE BWDBWCBWBBWARead HHXXXXRead HLHHHHWrite Byte A – DQ

Página 18

CY7C1364CDocument #: 38-05689 Rev. *E Page 9 of 18Maximum Ratings(Above which the useful life may be impaired. For user guide-lines, not tested.)Stor

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