Cypress CY62138EV30 Manual do Utilizador

Consulte online ou descarregue Manual do Utilizador para Hardware Cypress CY62138EV30. Cypress CY62138EV30 User Manual Manual do Utilizador

  • Descarregar
  • Adicionar aos meus manuais
  • Imprimir
  • Página
    / 9
  • Índice
  • MARCADORES
  • Avaliado. / 5. Com base em avaliações de clientes
Vista de página 0
2-Mbit (256K x 8) MoBL
®
Static RAM
CY62138EV30
MoBL
®
Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document #: 38-05577 Rev. *A Revised February 14, 2006
Features
Very high speed: 45 ns
Wide voltage range: 2.20V – 3.60V
Pin-compatible with CY62138CV30
Ultra-low standby power
Typical standby current: 1 µA
Maximum standby current: 7 µA
Ultra-low active power
Typical active current: 2 mA @ f = 1 MHz
Easy memory expansion with CE
and OE features
Automatic power-down when deselected
CMOS for optimum speed/power
Offered in Pb-free 36-ball BGA package
Functional Description
[1]
The CY62138EV30 is a high-performance CMOS static RAM
organized as 256K words by 8 bits. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ (MoBL
®
) in
portable applications such as cellular telephones. The device
also has an automatic power-down feature that significantly
reduces power consumption. The device can be put into
standby mode reducing power consumption when deselected
(CE
HIGH).
Writing to the device is accomplished by taking Chip Enable
(CE
) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins (I/O
0
through I/O
7
) is then written into the location
specified on the address pins (A
0
through A
18
).
Reading from the device is accomplished by taking Chip
Enable (CE
) and Output Enable (OE) LOW while forcing Write
Enable (WE
) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The eight input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE
LOW and WE LOW).
Note:
1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Logic Block Diagram
A
1
COLUMN
DECODER
ROW DECODER
SENSE AMPS
Data in Drivers
POWER
DOWN
WE
OE
I/O
0
I/O
1
I/O
2
I/O
3
256K x 8
ARRAY
I/O
7
I/O
6
I/O
5
I/O
4
A
0
A
12
CE
A
13
A
14
A
15
A
16
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
17
[+] Feedback
Vista de página 0
1 2 3 4 5 6 7 8 9

Resumo do Conteúdo

Página 1 - Static RAM

2-Mbit (256K x 8) MoBL® Static RAMCY62138EV30MoBL®Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600Docum

Página 2 - CY62138EV30

CY62138EV30MoBL®Document #: 38-05577 Rev. *A Page 2 of 9Pin Configuration[2]Product PortfolioProductVCC Range (V)Speed (ns)Power DissipationOperating

Página 3

CY62138EV30MoBL®Document #: 38-05577 Rev. *A Page 3 of 9Maximum Ratings(Above which the useful life may be impaired. For user guide-lines, not tested.

Página 4

CY62138EV30MoBL®Document #: 38-05577 Rev. *A Page 4 of 9 Thermal ResistanceParameter Description Test Conditions BGA UnitΘJAThermal Resistance (Junct

Página 5

CY62138EV30MoBL®Document #: 38-05577 Rev. *A Page 5 of 9 Switching Characteristics (Over the Operating Range)[9]Parameter Description45 nsUnitMin. Max

Página 6

CY62138EV30MoBL®Document #: 38-05577 Rev. *A Page 6 of 9Read Cycle No. 2 (OE Controlled)[14, 15]Write Cycle No. 1 (WE Controlled)[16, 18]Notes: 15. Ad

Página 7

CY62138EV30MoBL®Document #: 38-05577 Rev. *A Page 7 of 9 Write Cycle No. 2 (CE Controlled)[16, 18]Write Cycle No. 3 (WE Controlled, OE LOW)[18]Switchi

Página 8

CY62138EV30MoBL®Document #: 38-05577 Rev. *A Page 8 of 9© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to cha

Página 9

CY62138EV30MoBL®Document #: 38-05577 Rev. *A Page 9 of 9Document History PageDocument Title: CY62138EV30 2-Mbit (256K x 8) MoBL® Static RAMDocument Nu

Comentários a estes Manuais

Sem comentários