Cypress CY14E256L Manual do Utilizador descarregar pdf (Página 9)

CY14E256L

Document Number: 001-06968 Rev. *H Page 9 of 19

Output HIGH Voltage I

OUT

= –4 mA 2.4 V

Output LOW Voltage I

OUT

= 8 mA 0.4 V

Logic ‘0’ Voltage on HSB

Output

OUT

= 3 mA 0.4 V

CAP

Storage Capacitor Between V

CAP

pin and Vss, 6V rated. 68 µF +20% nom. 54 260 uF

Data Retention and Endurance

Parameter Description Min Unit

DATA

Data Retention 100 Years

Nonvolatile STORE Operations 1,000 K

Capacitance

In the following table, the capacitance parameters are listed.

[8]

Parameter Description Test Conditions Max Unit

Input Capacitance T

= 25°C, f = 1 MHz,

= 0 to 3.0V

5pF

OUT

Output Capacitance 7pF

Thermal Resistance

In the following table, the thermal resistance parameters are listed.

[8]

Parameter Description Test Conditions 32-SOIC 32-CDIP Unit

Thermal Resistance

(Junction to Ambient)

Test conditions follow standard test methods and proce-

dures for measuring thermal impedance, per EIA / JESD51.

35.45 TBD °C/W

Thermal Resistance

(Junction to Case)

13.26 TBD °C/W

Figure 6. AC Test Loads

AC Test Conditions

DC Electrical Characteristics

Over the operating range (continued)(V

= 4.5V to 5.5V)

[6]

Parameter Description Test Conditions Min Max Unit

5.0V

Output

30 pF

R1 963

512

5.0V

Output

5 pF

R1 963

512

For Tri-state Specs

Input Pulse Levels....................................................0V to 3V

Input Rise and Fall Times (10% - 90%)........................ <

5 ns

Input and Output Timing Reference Levels.................... 1.5V

Note

8. These parameters are guaranteed by design and are not tested.

Not Recommended for New Designs

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