Cypress CY14E256L Manual do Utilizador Página 3

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CY14E256L
Document Number: 001-06968 Rev. *H Page 3 of 19
Pin Configurations
Figure 1. Pin Diagram: 32-Pin SOIC/DIP
Table 1. Pin Definitions
Pin Name Alt I/O Type Description
A
0
–A
14
Input Address Inputs. Used to select one of the 32,768 bytes of the nvSRAM.
DQ
0
-DQ
7
Input or Output Bidirectional Data I/O Lines. Used as input or output lines depending on operation.
WE
W
Input Write Enable Input, Active LOW. When the chip is enabled and WE is LOW, data on the I/O
pins is written to the specific address location.
CE
E
Input Chip Enable Input, Active LOW. When LOW, selects the chip. When HIGH, deselects the chip.
OE
G
Input Output Enable, Active LOW. The active LOW OE input enables the data output buffers during
read cycles. Deasserting OE
HIGH causes the I/O pins to tri-state.
V
SS
Ground Ground for the Device. The device is connected to ground of the system.
V
CC
Power Supply Power Supply Inputs to the Device.
HSB
Input or Output Hardware Store Busy (HSB). When LOW, this output indicates a Hardware Store is in progress.
When pulled low external to the chip, it initiates a nonvolatile STORE operation. A weak internal
pull up resistor keeps this pin high if not connected (connection optional).
V
CAP
Power Supply AutoStore
Capacitor. Supplies power to nvSRAM during power loss to store data from SRAM
to nonvolatile elements.
Not Recommended for New Designs
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