Cypress CY62167EV18 Manual do Utilizador

CY62167EV18 MoBL®16 Mbit (1M x 16) Static RAMCypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600Document #

CY62167EV18 MoBL®Document #: 38-05447 Rev. *G Page 10 of 13Ordering InformationSpeed(ns) Ordering CodePackageDiagramPackage TypeOperatingRange55CY6216

CY62167EV18 MoBL®Document #: 38-05447 Rev. *G Page 11 of 13Figure 11. 48-Ball VFBGA (6 x 8 x 1 mm), 51-85150Package DiagramA1A1 CORNER0.750.75Ø0.30±0.

CY62167EV18 MoBL®Document #: 38-05447 Rev. *G Page 12 of 13Document History PageDocument Title: CY62167EV18 MoBL® 16 Mbit (1M x 16) Static RAMDocument

Document #: 38-05447 Rev. *G Revised March 13, 2009 Page 13 of 13MoBL is a registered trademark and More Battery Life is a trademark of Cypress Semico

CY62167EV18 MoBL®Document #: 38-05447 Rev. *G Page 2 of 13Pin ConfigurationFigure 1. 48-Ball VFBGA (6 x 7 x 1mm) / (6 x 8 x 1mm) Top View [1, 2, 3]Pr

CY62167EV18 MoBL®Document #: 38-05447 Rev. *G Page 3 of 13Maximum RatingsExceeding the maximum ratings may impair the useful life of thedevice. These

CY62167EV18 MoBL®Document #: 38-05447 Rev. *G Page 4 of 13Thermal ResistanceTested initially and after any design or process changes that may affect t

CY62167EV18 MoBL®Document #: 38-05447 Rev. *G Page 5 of 13Switching Characteristics Over the Operating Range[13, 14] Parameter Description55 nsUnitMin

CY62167EV18 MoBL®Document #: 38-05447 Rev. *G Page 6 of 13Switching WaveformsFigure 4 shows address transition controlled read cycle waveforms.[18, 19

CY62167EV18 MoBL®Document #: 38-05447 Rev. *G Page 7 of 13Figure 6 shows WE controlled write cycle waveforms.[17, 21, 22]Figure 6. Write Cycle No. 1S

CY62167EV18 MoBL®Document #: 38-05447 Rev. *G Page 8 of 13Figure 7 shows CE1 or CE2 controlled write cycle waveforms.[17, 21, 22]Figure 7. Write Cycl

CY62167EV18 MoBL®Document #: 38-05447 Rev. *G Page 9 of 13Figure 9 shows BHE/BLE controlled, OE LOW write cycle waveforms.[22]Figure 9. Write Cycle N